Global Power Technology is one of the pioneers in the industrialization of China’s silicon carbide (SiC) power devices, as well as the first third-generation semiconductor material silicon carbide device manufacturing and application solution provider in China.
Products we deal with:
- SiCBJT/MOSFET,SiCBJT: 1200V10A
- SiCMosfet: 1200V40mΩ/80mΩ
- SiCModule 650V/1200V @200A~450A
- SiC SBD 650V: (2A-100A), 1200V: (2A-50A), 3300V: (0.6A-50A), 1700V:5A/10A/20A
Applications: Communication, General, Industrial, Medical.